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NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Continuous Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70C/W Lead Temperature (During Soldering, 1/16" from Case, 10sec Max), TL . . . . . . . . . . . . . . . . +265C Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 2 ICEX ICEO Emitter Cutoff Current IEBO VCE = 140V, VBE(off) = 1.5V VCE = 140V, VBE(off) = 1.5V, TC = +150C VCE = 140V, IB = 0 VEB = 5V, IC = 0 140 - - - - - - - - - - 100 2 250 100 V A mA A A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance fT Cob VCE = 10V, IC = 500mA, ftest = 0.5MHz VCB = 10V, IE = 0, ftest = 1MHz 2 - - - - 1000 MHz pF hFE VCE(sat) VBE(on) VCE = 2V, IC = 5A IC = 5A, IB = 500mA VCE = 2V, IC = 5A 25 - - - - 150 1 2 V V IS/b VCE = 50V, t = 1s (non-repetitive) VCE = 100V, t = 1s (non-repetitive) 5 1 - - - - A A Symbol Test Conditions Min Typ Max Unit
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.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min Emitter .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max Collector/Case

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